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tsm 4nb60 600 v n - channel power mosfet 1/ 11 version: f13 to - 220 ito - 220 product summary v ds (v) r ds(on) ( ) i d (a) 600 2.5 @ v gs =10v 4 general description the tsm 4nb60 n- channel power mosfet is produced by new advance planar process . this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. to - 251 (ipak) to - 252 (dpak) features low r ds(on) 2 .2 ( typ .) low gate charge typical @ 14.5nc (t yp.) low crss typical @ 7 pf (typ.) 100% avalanche tested ordering information part no. package packing tsm 4nb60 ch c5g to -2 51 75pcs / tube tsm 4nb60 cp ro g to -2 52 2.5kpcs / 13 reel tsm 4nb60 cz c0 to - 220 50pcs / tube tsm 4nb60 ci c0 g ito - 220 50pcs / tube note: g denotes for halogen free absolute maximum ratings (t a = 25 o c unless otherwise noted ) parameter symbol limit unit ipak/dpak ito - 220 to - 220 drain - source voltage v ds 600 v gate - source voltage v gs 30 v continuous drain current t c = 25oc i d 4 a t c = 100 oc 2. 4 a pulsed drain current * i dm 16 a single pulse avalanche energy (note 2) e as 70 mj avalanche current (repetitive) (note 1) i ar 4 a repetitive avalanche energy (note 1) e ar 5 mj peak diode recovery dv/dt (n ote 3) dv/dt 4.5 v/ns total power dissipation @ t c =25oc p tot 50 25 70 w operating junction temperature t j 150 oc storage temperature range t stg - 55 to +150 o c note: limited by maximum junction temperature block diagram n- channel mosfet pin definition : 1. gate 2. drain 3. source downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 2/ 11 version: f13 thermal performance parameter symbol limit unit ipak/dp ak ito - 220 to - 220 thermal resistance - junction to case r ? jc 2. 5 5 1.78 o c/w thermal resistance - junction to ambient r ? ja 83 62.5 62.5 o c/w electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit sta tic drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 600 -- -- v drain - source on - state resistance v gs = 10v, i d = 2a r ds(on) -- 2 .2 2. 5 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 2.5 3.5 4.5 v zero gate voltage drain current v ds = 60 0v, v gs = 0v i dss -- -- 1 a gate body leakage v gs = 3 0v, v ds = 0v i gss -- -- 10 0 na forward transfer conductance v ds = 4 0v, i d = 2a g fs -- 2.6 -- s dynamic total gate charge v ds = 480v, i d = 4a, v gs = 10v (note 4,5) q g -- 14.5 -- nc gate - sourc e charge q gs -- 3.4 -- gate - drain charge q gd -- 7 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 500 -- pf output capacitance c oss -- 53.2 -- reverse transfer capacitance c rss -- 7 -- switching turn - on delay time v gs = 10v, i d = 4a, v dd = 300v, r g = 25 (note 4,5) t d(on) -- 11 -- ns turn - on rise time t r -- 20 -- turn - off delay time t d(off) -- 30 -- turn - off fall time t f -- 19 -- source - drain diode ratings and characteristic source current integral reverse diode in th e mosfet i s -- -- 4 a source current (pulse) i sm -- -- 16 a diode forward voltage i s = 4a, v gs = 0v v sd -- -- 1.13 v reverse recovery time v gs = 0v, i s = 4a , di f /dt = 100a/ s t rr -- 522 -- ns reverse recovery charge q rr -- 1. 6 -- c note 1: repetitiv e rating: pulse width limited by maximum junction temperature note 2: v dd = 50v, i as =4 a, l=8mh , r g = 25 , starting t j = 25oc note 3: i sd 4a, di/dt 200a/ s , v dd bv dss , starting t j = 25oc note 4: p ulse test: pulse width 300 s , duty cycle 2% note 5: essentially independent of operating temperature downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 3/ 11 version: f13 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 4/ 11 version: f13 diode reverse recovery time test circuit & waveform downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 5/ 11 version: f13 electrical characteristics curve ( ta = 25oc , unless otherwise noted ) output characteristics transfer character istics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage . downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 6/ 11 version: f13 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) breakdown voltage vs. temperature threshold voltage vs. temperature maximum safe operating area downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 7/ 11 version: f13 to - 220 mechanical drawing unit: millimeters marking diagram y = year code m = mon th code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j = oct, k =nov, l =dec) l = lot code downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 8/ 11 version: f13 ito - 220 mechanical drawing unit: millimeters marking diagram g = halogen free product y = year code ww = week code (01~52) f = factory code downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 9/ 11 version: f13 to - 251 mechanical drawing unit: m illimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 10 / 11 version: f13 to - 252 mechanical drawing unit: millim eters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code downloaded from: http:///
tsm 4nb60 600 v n - channel power mosfet 11 / 11 version: f13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on i ts behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a p roduct description only. no license, express or implied , to any intellectual property rights is granted by this document. except as provided in t scs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any exp ress or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particu lar purpose, merchantability, or infringement of any patent, copyr ight, or other intellectual property right. the prod ucts shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting f rom such improper use or sale. downloaded from: http:///

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